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Y. Omura, “Negative Conductance Properties in Extremely Thin Silicon-on-Insulator Insulated-Gatepn-Junction De vices (Silicon-on-Insulator Surface Tunnel Transistor),” Japanese Journal of Applied Physics, Vol. 35, No. 11A, 1996, pp. L1401-L1403. doi:10.1143/JJAP.35.L1401

has been cited by the following article:

• TITLE: Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

  AUTHORS: Yasuhisa Omura, Yukio Iida

  KEYWORDS: RF-ID; Schenkel Circuit; SOI-MOSFET; Quasi-Diode; Low-Power

  JOURNAL NAME: Circuits and Systems, Vol.4 No.2, April 17, 2013

  ABSTRACT: The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.