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M. Mobarak, H. Berger, G. F. Lorusso, V. Capozzi, G. Perna, M. M. Ibrahim and G. Margaritondo, “The Growth and Properties of Single Crystals of GaInTe2, a Ternary Chalkogenide Semiconductor,” Journal of Physics D: Applied Physics, Vol. 31, No. 12, 1998, pp. 1433-1437.

has been cited by the following article:

• TITLE: The Growth of Single Crystals of InGaSe2 Compounds, Their X-Ray-Phase Analysis, Electronic Structure and Optical Functions

  AUTHORS: Eldar Gojaev, Zakir Jahangirli, Pyuruza Alieva, Khatira Khalilova, Tahir Musaev

  KEYWORDS: Band Structure; Optical Functions; InGaSe2

  JOURNAL NAME: Open Journal of Inorganic Non-metallic Materials, Vol.3 No.1, January 29, 2013

  ABSTRACT: Growing of InGaSe2 single crystals has been carried out by employing the Brijman-Stockbargor methods. On the base of X-ray-analysis it has been found that the given phase is crystallized into tetragonal symmetry. The temperature dependence of electric conductivity has been studied. Band structure has been computed. Optical functions, effective masses of electrons and holes have been calculated. Origin of formation of valence and conductance bands as well as the width of forbidden band for InGaSe2 have been determined.