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T. Chattopadhyay, R. P. Santandrea and H. G. Von Schnering, “Temperature and Pressure Dependence of the Crystal Structure of InTe: A New High Pressure Phase of InTe,” Journal of Physics and Chemistry of Solids, Vol. 46, No. 3, 1985, pp. 351-356. doi:10.1016/0022-3697(85)90178-7

has been cited by the following article:

• TITLE: Mechanical and Dielectric Properties of InTe Crystals

  AUTHORS: Teena Mathew, Ayyappacharuparambil Gopalanachary Kunjomana, Keelapattu Munirathnam, Kunnath Appukuttan Chandrasekharan, Muthukrishnan Meena, Chelliah Kamalakshiammal Mahadevan

  KEYWORDS: Indium Telluride; Bridgman Technique; Microhardness; Dielectric Constant; Dielectric Loss; AC Conductivity

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.1 No.3, December 31, 2012

  ABSTRACT: The mechanical properties of indium telluride (InTe) crystals grown by the Bridgman technique were investigated at room temperature using a Vickers hardness tester. The microhardness is observed to vary nonlinearly with the applied load, 10 - 100 g. The cleaved ingots are found to have high value of microhardness (222.44 kg/mm2 at a load of25 g), which reflects an appreciable degree of strength due to their covalent bonding and homogeneity. The studies revealed that the dislocations in the grown crystals offered a resistance to fresh dislocations due to interaction. At higher loads, plastic deformation induces by slip, exhibiting a decrease in hardness from the peak value. The dielectric constant and dielectric loss of indium telluride crystals were evaluated in the frequency range, 1 kHz - 1 MHz for different temperatures (35oC - 140oC). The frequency dependence of AC conductivity was analyzed as a function of temperature. The effect of temperature and frequency on the dielectric response of InTe crystals has been assessed on their cleavage faces and the obtained results are discussed.