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Y. S. Boyarskaya, D. Z. Grabko, M. I. Medinskaya and N. A. Palistrant, “Mechanical Properties of Pure and Doped InP Single Crystals Determined under Local Loading,” Semiconductors, Vol. 31, No. 2, 1997, pp. 139-142. doi:10.1134/1.1187095

has been cited by the following article:

• TITLE: Mechanical and Dielectric Properties of InTe Crystals

  AUTHORS: Teena Mathew, Ayyappacharuparambil Gopalanachary Kunjomana, Keelapattu Munirathnam, Kunnath Appukuttan Chandrasekharan, Muthukrishnan Meena, Chelliah Kamalakshiammal Mahadevan

  KEYWORDS: Indium Telluride; Bridgman Technique; Microhardness; Dielectric Constant; Dielectric Loss; AC Conductivity

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.1 No.3, December 31, 2012

  ABSTRACT: The mechanical properties of indium telluride (InTe) crystals grown by the Bridgman technique were investigated at room temperature using a Vickers hardness tester. The microhardness is observed to vary nonlinearly with the applied load, 10 - 100 g. The cleaved ingots are found to have high value of microhardness (222.44 kg/mm2 at a load of25 g), which reflects an appreciable degree of strength due to their covalent bonding and homogeneity. The studies revealed that the dislocations in the grown crystals offered a resistance to fresh dislocations due to interaction. At higher loads, plastic deformation induces by slip, exhibiting a decrease in hardness from the peak value. The dielectric constant and dielectric loss of indium telluride crystals were evaluated in the frequency range, 1 kHz - 1 MHz for different temperatures (35oC - 140oC). The frequency dependence of AC conductivity was analyzed as a function of temperature. The effect of temperature and frequency on the dielectric response of InTe crystals has been assessed on their cleavage faces and the obtained results are discussed.