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K. Wang, C. Steimer, D. Wamwangi, S. Ziegler and M. Wuttig, “Effect of Indium Doping on Ge2Sb2Te5 Thin Films for Phase-Change Optical Storage,” Applied Physics A: Materials Science & Processing, Vol. 80, No. 8, 2005, pp. 1611-1616. doi:10.1007/s00339-005-3232-2

has been cited by the following article:

• TITLE: Characterization of Thin Films by Low Incidence X-Ray Diffraction

  AUTHORS: Mirtat Bouroushian, Tatjana Kosanovic

  KEYWORDS: Glancing Angle X-Ray Diffraction; Thin films; Titanium Oxides; Metal Chalcogenides; Electrodeposition

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.1 No.3, December 21, 2012

  ABSTRACT: Glancing Angle X-ray Diffraction (GAXRD) is introduced as a direct, non-destructive, surface-sensitive technique for analysis of thin films. The method was applied to polycrystalline thin films (namely, titanium oxide, zinc selenide, cadmium selenide and combinations thereof) obtained by electrochemical growth, in order to determine the composition of ultra-thin surface layers, to estimate film thickness, and perform depth profiling of multilayered heterostructures. The experimental data are treated on the basis of a simple absorption-diffraction model involving the glancing angle of X-ray incidence.