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J. Robertson, “High Dielectric Constant Gate Oxides for Metal Oxide Si Transistors,” Reports on Progress in Physics, Vol. 69, No. 2, 2006, pp. 327-396. doi:10.1088/0034-4885/69/2/R02

has been cited by the following article:

• TITLE: Influence of Oxygen to Argon Ratio on the Structural and Morphological Properties of Nb-Doped SrTiO3 Epitaxial Films Grown by Reactive Ion Beam Sputter Deposition

  AUTHORS: Gasidit Panomsuwan, Nagahiro Saito

  KEYWORDS: Nb-Doped SrTiO3; Epitaxial Films; Crystal Structure; Ion Beam Sputter Deposition

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.2 No.1, March 29, 2013

  ABSTRACT: Nb-doped SrTiO3 (STNO) films were grown on (001)-oriented LaAlO3 substrates by a reactive ion beam sputter deposition at various mixing ratios (OMRs) with a substrate temperature of 800oC. The STNO films exhibited good crystallinity with an epitaxial orientation as characterized by high-resolution X-ray diffraction, grazing-incidence X-ray diffraction, and in-plane pole figure analysis. A decrease of out-of-plane and in-plane lattice constants was observed with an increase of OMR. The surface morphology of the STNO films showed a very dense fine-grain structure. The root-mean-square roughness was found to be increased as the OMR increased. Moreover, the elemental compositions of the STNO films were examined by X-ray photoelectron spectroscopy.