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K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw and C. D. Overgaard, “Field Effect Transistors with SrTiO₃ Gate Dielectric on Si,” Applied Physics Letters, Vol. 76, No. 10, 2000, pp, 1324-1326.

has been cited by the following article:

• TITLE: Influence of Oxygen to Argon Ratio on the Structural and Morphological Properties of Nb-Doped SrTiO3 Epitaxial Films Grown by Reactive Ion Beam Sputter Deposition

  AUTHORS: Gasidit Panomsuwan, Nagahiro Saito

  KEYWORDS: Nb-Doped SrTiO3; Epitaxial Films; Crystal Structure; Ion Beam Sputter Deposition

  JOURNAL NAME: Crystal Structure Theory and Applications, Vol.2 No.1, March 29, 2013

  ABSTRACT: Nb-doped SrTiO3 (STNO) films were grown on (001)-oriented LaAlO3 substrates by a reactive ion beam sputter deposition at various mixing ratios (OMRs) with a substrate temperature of 800oC. The STNO films exhibited good crystallinity with an epitaxial orientation as characterized by high-resolution X-ray diffraction, grazing-incidence X-ray diffraction, and in-plane pole figure analysis. A decrease of out-of-plane and in-plane lattice constants was observed with an increase of OMR. The surface morphology of the STNO films showed a very dense fine-grain structure. The root-mean-square roughness was found to be increased as the OMR increased. Moreover, the elemental compositions of the STNO films were examined by X-ray photoelectron spectroscopy.