TITLE:
Effect of Copper Doping on Structural, Dielectric and DC Electrical Resistivity Properties of BaTiO3
AUTHORS:
Moganti Venkata Someswara Rao, Kocharlakota Venkata Ramesh, Majeti Naga Venkata Ramesh, Bonthula Srinivasa Rao
KEYWORDS:
Barium Titanate; Copper Doping; Dielectric Properties; DC Electrical Resistivity; Frequency Dependence
JOURNAL NAME:
Advances in Materials Physics and Chemistry,
Vol.3 No.1,
March
29,
2013
ABSTRACT: The modified BaTiO3 ferroelectric materials are suitable for
pyroelectric applications. This paper reports the structural, dielectric and
electrical properties on copper influence in BaTiO3 when it was
substituted site “A” of perovskite structure
of BaTiO3. Copper
has been chosen for modified BaTiO3 with different concentrations
with stoichiometry Ba1-xCuxTiO3, where
x = 0.01%, 0.02%, 0.03% and 0.04%. The X-ray diffraction patterns of the samples doped
with different composition of CuO are found to be that the positions and
intensities of the diffraction peaks are similar and no secondary phases were observed.
The Curie’s temperature (Tc)
for all CuO doped BaTiO3 with were found to be in the range of 120°C
to 125°C. The frequency dependence of relative permittivity (εr) and
dielectric loss (Tanδ) of Ba1-xCuxTiO3 samples
at room temperature were reported in the range 100 KHz - 1 MHz. The
temperature dependence of D.C electrical resistivity studies were reported for
all samples indicating that the participation of Cu2+-Cu+ ions in the
conduction process around their Curie’s temperature.