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G. A. P. Thé, “How to Simulate a Semiconductor Quantum Dot Laser: General Description,” Revista Brasileira de Ensino de Fisica, Vol. 31, No. 2, 2009, p. 2302.

has been cited by the following article:

• TITLE: Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations

  AUTHORS: Ahmadreza Daraei, Seyed Mohsen Izadyar, Naser Chenarani

  KEYWORDS: InAs/GaAs Quantum Dot Laser; Simulation; Carrier Dynamics; 4th Order Runge-Kutta Method

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.1, March 29, 2013

  ABSTRACT: In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equations are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (GS), first excited state (ES1), second excited state (ES2) and output power of the QD laser will be presented.