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H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz and C. Sirtori, “300 K Operation of a GaAs-Based Quantum-Cascade Laser at λ ≈ 9 μm,” Applied Physics Letters, Vol. 78, No. 22, 2001, pp. 3529-3531.

has been cited by the following article:

• TITLE: Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures

  AUTHORS: Khadidja Zellat, Belabbes Soudini, Salah Mohamed Ait Cheikh

  KEYWORDS: SiGe Alloy; Electronic and Optical Properties; Quantum Cascade Lasers (QCLs)

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.3 No.1, March 27, 2013

  ABSTRACT: This paper reviews the basic properties of the SiGe alloy, presents some new results on its electronic and optical properties, and discusses the approach that has been followed to model quantum wells containing SiGe layers for applications in quantum cascade lasers. The shape of the confining potential, the subband energies and their eigen envelope wave functions are calculated by solving a one-dimensional Schr?dinger equation. The calculations of optical parameters are used to optimize the Si/SiGe quantum cascade structures. Our results are found to be in good agreement with other calculations.