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M. Mao, Y. N. Wang and A. Bogaerts, “Numerical Study of the Plasma Chemistry in Inductively Coupled SF6 and SF6/Ar Plasma Used for Deep Silicon Etching Applications,” Journal of Physics D: Applied Physics, Vol. 44, No. 43, 2011, Article ID: 435202. doi:10.1088/0022-3727/44/43/435202

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