А. S. Borukhovich, N. I. Ignatyeva, А. I. Galyas, K. I. Yanushkevich and А. I. Stognii, “Spin Transistor,” RF Patent No. 2387047, 2010. (in Russian).
has been cited by the following article:
TITLE: Spin Transfer in EuO:Fe/GaAs Contact
AUTHORS: Arnold S. Borukhovich
KEYWORDS: Spintronics; Magnetic Semi-Conduction; Spin Transfer
JOURNAL NAME: Journal of Modern Physics, Vol.4 No.3, March 6, 2013
ABSTRACT: Spin-wave structures whose current-voltage characteristics are controlled at room temperatures by magnetic field were produced with industrial technological methods using a spintronic europium-monoxide-based thin-film composite as an emitter and monocrystalline semiconductor n-GaAs as a collector. This shows that spin current transport actually exists and that a high-temperature spin transistor was produced with the use of the magnetic semiconductor/nonmagnetic semiconductor contact.