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H. Habuka, Y. Ando and M. Tsuji, “Room Temperature Process for Chemical Vapor Deposition of Silicon Carbide Thin Film Using Monomethylsilane Gas,” Surface and Coatings Technology, Vol. 206, No. 1, 2011, pp. 1503-1506. doi:10.1016/j.surfcoat.2011.09.037

has been cited by the following article:

• TITLE: In-Situ Monitoring of Chemical Vapor Deposition from Trichlorosilane Gas and Monomethylsilane Gas Using Langasite Crystal Microbalance

  AUTHORS: Hitoshi Habuka, Yurie Tanaka

  KEYWORDS: Chemical Vapor Deposition; In-Situ Measurement; Langasite Crystal Microbalance

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.3 No.1A, February 28, 2013

  ABSTRACT: Using the langasite crystal microbalance (LCM), the trends in film thickness produced by means of the chemical vapor deposition using trichlorosilane gas, monomethylsilane gas and their mixed gas were observed at 600?C and evaluated by comparison with the information from a transmission electron microscope (TEM). The crystalline silicon film thickness from trichlorosilane gas was comparable to that of an amorphous silicon carbide film from monomethylsilane gas. The film obtained from the gas mixture was amorphous and was the thinnest in this study. Because the thickness trend obtained by the LCM agreed with that by the TEM, the LCM is shown to be a convenient evaluation tool for the behavior of various film deposition.