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Y. F. Wu, M. Moore, T. Wisleder, P. Chavarkar and P. Parikh, “Noise Characteristics of Field-Plated HEMTs,” International Journal of High Speed Electronics and Systems, Vol. 14, No. 3, 2004, pp. 192-194. doi:10.1142/S0129156404002880

has been cited by the following article:

• TITLE: Efficient Time-Domain Signal and Noise FET Models for Millimetre-Wave Applications

  AUTHORS: Shahrooz Asadi, Mustapha C. E. Yagoub

  KEYWORDS: Distributed Model; FDTD; Noise Correlation Matrix; FET

  JOURNAL NAME: Journal of Electromagnetic Analysis and Applications, Vol.5 No.1, January 29, 2013

  ABSTRACT: Based on the active coupled line concept, a novel approach for efficient signal and noise modeling of millimeter-wave field-effect transistors is proposed. The distributed model considers the effect of wave propagation along the device electrodes, which can significantly affect the device performance especially in the millimetre-wave range. By solving the multi-conductor transmission line equations using the Finite-Difference Time-Domain technique, the proposed procedure can accurately determine the signal and noise performance of the transistor. In order to demonstrate the proposed FET model accuracy, a distributed low-noise amplifier was designed and tested. A model selection is often a trade-off between procedure complexity and response accuracy. Using the proposed distributed model versus the circuit-based model will allow increasing the model frequency range.