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S. Nagalingam, S. Vasudevan and P. Ramasamy, “Effect of Impurities on the Nucleation of ADP from Aqueous Solution,” Crystal Research and Technology, Vol. 16, No. 6, 1981, p. 647-650.

has been cited by the following article:

• TITLE: Dielectric and Optical Characterization of Boron Doped Ammonium Dihydrogen Phosphate

  AUTHORS: Delci Zion, Shyamala Devarajan, Thayumanavan Arunachalam

  KEYWORDS: Solution Growth; ADP; Boric Acid; Optical Transparency; NLO; Dielectric Constant

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.3 No.1, January 28, 2013

  ABSTRACT: Single crystals of pure and boron doped ammonium dihydrogen phosphate were grown from aqueous solution by slow solvent evaporation process. ICP studies were done to confirm the presence of the dopant boron in the parent crystal. The values of the lattice parameters were determined by single crystal X-ray diffraction. The pure and doped ADP crystals were found to have tetragonal structure. Complete optical characterizations of the crystals were done using the FTIR, UV-Vis and NLO studies. The presences of the various functional groups in the crystals were identified by FTIR spectrum. The band gap energies of the pure and doped crystals have been calculated at their cut off frequencies using the UV-Vis spectrum. The second harmonic generation efficiency of the crystals was determined. The electric properties of the grown crystal have been analyzed by studying the variation of dielectric constant and dielectric loss with frequency.