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S. Chattopadhyaya, A. Chattopadhyaya and K. Kummar Das, “Configuration Interaction Study of the Low-Lying Electronic States of Silicon Monoxide,” The Journal of Physical Chemistry A, Vol. 107, No. 1, 2003, pp. 148-158. HUdoi:10.1021/jp021845vU

has been cited by the following article:

• TITLE: Theoretical Study with Rovibrational and Dipole Moment Calculation of the SiO Molecule

  AUTHORS: Khalil Badreddine, Nayla El-Kork, Mahmoud Korek

  KEYWORDS: Ab Initio Calculation; SiO Molecule; Potential Energy Curves; Spectroscopic Constants; Dipole Moment; Rovibrational Calculation

  JOURNAL NAME: Journal of Modern Physics, Vol.4 No.1, January 28, 2013

  ABSTRACT: Via CASSCF/MRCI and RSPT2 calculations (single and double excitation with Davidson correction) the potential en- ergy curves of 20 electronic states in the representation 2S+1Λ（±）of the molecule SiO have been calculated. By fitting these potential energy curves to a polynomial around the equilibrium internuclear distance re, the harmonic frequency ωe, the rotational constant Be, and the electronic energy with respect to the ground state Te have been calculated. For the considered electronic states the permanent dipole moment μ have been plotted versus the internuclear distance r. Based on the canonical functions approach, the eigenvalues Ev, the rotational constant Bv and the abscissas of the turning points rmin and rmax have been calculated. The comparison of these values to the experimental and theoretical results available in the literature is presented. In the present work 8 higher electronic states have been studied theoretically for the first time.