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W. Norimatsu, J. Takada and M. Kusunoki, “Formation Mechanism of Graphene Layers on SiC (0001) in a High- Pressure Argon Atmosphere,” Physical Review B, Vol. 84, No. 3, 2011, Article ID: 035424. doi:10.1103/PhysRevB.84.03542

has been cited by the following article:

• TITLE: Effect of Growth Morphology on the Electronic Structure of Epitaxial Graphene on SiC

  AUTHORS: Michael D. Williams, Dennis W. Hess

  KEYWORDS: Graphene; SiC; UPS; Work Function; Electronic Structure

  JOURNAL NAME: Graphene, Vol.2 No.1, January 24, 2013

  ABSTRACT: Ultraviolet photoemission spectroscopy is used to investigate the electronic structure of epitaxial graphene grown by the thermal decomposition of the carbon face of 4H SiC. We find that the growth of the film on the chemical mechanically polished and hydrogen etched surface enhances spectral features in the valence band structure compared to the film grown on an unpolished hydrogen etched substrate. This result is indicative of a more highly ordered surface structure compared to the morphologically rough material and shows that substrate preparation plays an important role in the quality of the film. The work function of the smooth surface film is found to be 0.4 eV higher than that for graphite and 0.1 eV less than for the rough surface growth.