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Y.-M. Lin, K. A. Jenkins, A. Valdes-Garcia, J. P. Small, D. B. Farmer, et al., “Operation of Graphene Transistors at Gigahertz Frequencies,” Nano Letters, Vol. 9, No. 1, 2008, pp. 422-426. doi:10.1021/nl803316h

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• TITLE: Flexible Graphene Devices with an Embedded Back-Gate

  AUTHORS: Jasper van Veen, Andres Castellanos- Gomez, Herre S. J. van der Zant, Gary A. Steele

  KEYWORDS: Graphene Device; Flexible Electronics; Back-Gate; Strain Engineering

  JOURNAL NAME: Graphene, Vol.2 No.1, January 24, 2013

  ABSTRACT: We show the fabrication of flexible graphene devices with an embedded backgate. The resistance of these devices can be tuned by changing the strain through the bending of the substrate. These devices can be useful for applications requiring a flexible graphene-based field effect transistor in where the graphene channel is not covered (such as biological or chemical sensors and photo-detectors).