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G. Zoppi, I. Forbes, R. W. Miles, P. J. Dale, J. J. Scragg and L. M. Peter, Prog. Photovolt. Res. Appl. 17, 2009, pp.315-319.

has been cited by the following article:

• TITLE: Preparation of High Ga Content Cu(In,Ga)Se2 Thin Films by Sequential Evaporation Process Added In2S3

  AUTHORS: Toshiyuki Yamaguchi, Kazuma Tsujita, Shigetoshi Niiyama, Toshito Imanishi

  KEYWORDS: Cu(In, Ga)Se2Thin Film; Solar Cell; High Ga Content; Sulfur Incorporation; Sequential Evaporation

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.2 No.4B, January 16, 2013

  ABSTRACT: High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the In2S3 /(Ga2Se3+ In2Se3) ratio.