TITLE:
The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer
AUTHORS:
Mohamed K. El-Adawi, Najla S. Al-Shameri
KEYWORDS:
Efficiency; Diffusion Equation; Recombination Velocity
JOURNAL NAME:
Optics and Photonics Journal,
Vol.2 No.4,
December
31,
2012
ABSTRACT: The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the
junction in determining the current density “J” through the cell is revealed. The unsteady carrier
diffusion equation is solved under illumination conditions considering a source
spectral function G(λ). The efficiency of the device as a function of Si , Va , G(λ) is
obtained. Computations considering a silicon solar cell are given as an
illustrative example.