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L. M. Chang, S. J. Chang, Z. Y. Jiao, et al., “Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip,” IEEE Photonics Technology Letters, Vol. 24, No. 3, 2012, pp. 1412-1414. doi:10.1109/LPT.2012.2205236

has been cited by the following article:

• TITLE: Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

  AUTHORS: Xueyun Song, Xianghua Zeng, Junbin Zhang, Yuzhe Jin, Xiangdong Meng

  KEYWORDS: GaN-Based Leds; Mesa Structure; Optoelectronic Properties

  JOURNAL NAME: Materials Sciences and Applications, Vol.3 No.12, December 13, 2012

  ABSTRACT: GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.