Article citationsMore>>

H. Kim, J. Cho, J. W. Lee, S. Yoon, H. Kim, C. Sone, Y. Park and T.-Y. Seong, “Consideration of the Actual Cur rent-Spreading Length of GaN-Based Light-Emitting Di odes for High-Efficiency Design,” IEEE Journal of Quantum Electronics, Vol. 43, No. 8, 2007, pp. 625-632. doi:10.1109/JQE.2007.900262

has been cited by the following article:

• TITLE: Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

  AUTHORS: Xueyun Song, Xianghua Zeng, Junbin Zhang, Yuzhe Jin, Xiangdong Meng

  KEYWORDS: GaN-Based Leds; Mesa Structure; Optoelectronic Properties

  JOURNAL NAME: Materials Sciences and Applications, Vol.3 No.12, December 13, 2012

  ABSTRACT: GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.