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A. Beaumont, C. Dubuc, J. Beauvais and D. Drouin, “A Nanodamascene Process for Advanced Single-Electron Transistor Fabrication,” IEEE Transactions on Nanotechnologyon, Vol. 7, No. 1, 2009, pp. 68-73. doi:10.1109/TNANO.2007.91343010

has been cited by the following article:

• TITLE: New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature

  AUTHORS: Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi

  KEYWORDS: Single-Electron Transistor (SET); Master Equation; Orthodox Theory; Tunnel Current; Thermionic Current; SIMON

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.2 No.4, December 11, 2012

  ABSTRACT: We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.