TITLE:
New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature
AUTHORS:
Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi
KEYWORDS:
Single-Electron Transistor (SET); Master Equation; Orthodox Theory; Tunnel Current; Thermionic Current; SIMON
JOURNAL NAME:
World Journal of Nano Science and Engineering,
Vol.2 No.4,
December
11,
2012
ABSTRACT: We propose a novel analytical model to describe the drain-source current as well as gate-source of single-electron transistors (SETs) at high temperature. Our model consists on summing the tunnel current and thermionic contribution. This model will be compared with another model.