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U. Gogineni, et al, “Effect of Substrate Contact Shape and Placement on RF Characteristics of 45-nm Low-Power CMOS Devices,” IEEE Radio Frequency Integrated Circuits Symposium, Massachusetts, 2009, pp. 163-166.

has been cited by the following article:

• TITLE: Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

  AUTHORS: Viranjay M. Srivastava

  KEYWORDS: 45-nm Technology, Capacitance of Double-Gate MOSFET, DG MOSFET, DP4T Switch, Radio Frequency, RF Switch, Resistance of Double-Gate MOSFET, VLSI

  JOURNAL NAME: Wireless Engineering and Technology, Vol.1 No.2, November 2, 2010

  ABSTRACT: In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.