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A. M. A. Haleem and M. Ichimura, “Wide Bandgap InS Based Thin Film: Deposition Characterization and Application in SnS Solar Cells,” Japanese Journal of Applied Physics, Vol. 48, 2009, Article ID: 035506. doi:10.1143/JJAP.48.035506

has been cited by the following article:

• TITLE: Sulphurization of the Electrochemically Deposited Indium Sulphide Oxide Thin Film and Its Photovoltaic Applications

  AUTHORS: Ashraf M. A. Haleem, Mutsumi Sugiyama, Masaya Ichimura

  KEYWORDS: Indium Sulphide Oxide; Electrochemical Depositon; Thin Films; Sulphurization; Cd-Free Buffer Layer; Solar Cells

  JOURNAL NAME: Materials Sciences and Applications, Vol.3 No.11, November 29, 2012

  ABSTRACT: The post-deposition heat treatment (annealing) for the electrochemically deposited thin film is often necessary in order to improve its crystallinity. In the present study, the electrochemically deposited indium sulfide oxide thin film was annealed in sulphure atmosphere for 60 min at 150℃ and 300℃. The impact of the annealing process on the composition, crystal structure, and surface morphology of the thin film was investigated. In addition, superstrate heterojunction solar cells based on the annealed film as a buffer layer and tin sulphide as an active layer were fabricated and characterized. They showed diode-like behavior under dark condition and a relatively small photovoltaic effect under AM1.5 illumination condition.