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Z.-Q. Xu, H. Deng, Y. Li and H. Cheng, “Al-Doping Effects on Structure, Electrical and Optical Properties of c-Axis-Orientated ZnO: Al Thin Films,” Materials Science in Semiconductor Processing, Vol. 9, No. 1-3, 2006, pp. 132-135. doi:10.1016/j.mssp.2006.01.082

has been cited by the following article:

• TITLE: Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis

  AUTHORS: Nadia Chahmat, Ammar Haddad, Azzedine Ain-Souya, Rachid Ganfoudi, Nadir Attaf, Mokhtar Ghers

  KEYWORDS: ZnO Thin Films; Ultrasonic Spray; Semiconductor doping; Optical Gap

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.11, November 28, 2012

  ABSTRACT: Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.