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T. Ootsuka, Z. Liu, M. Osamura, Y. Fukuzawa, R. Kuroda, Y. Suzuki, et al., “Studies on Aluminum-Doped ZnO Films for Transparent Electrode and Antireflection Coating of β-FeSi2 Optoelectronic Devices,” Thin Solid Films, Vol. 476, No. 1, 2005, pp. 30-34.
doi:10.1016/j.tsf.2004.06.145
has been cited by the following article:
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TITLE:
Effect of Sn Doping on the Properties of ZnO Thin Films Prepared by Spray Pyrolysis
AUTHORS:
Nadia Chahmat, Ammar Haddad, Azzedine Ain-Souya, Rachid Ganfoudi, Nadir Attaf, Mokhtar Ghers
KEYWORDS:
ZnO Thin Films; Ultrasonic Spray; Semiconductor doping; Optical Gap
JOURNAL NAME:
Journal of Modern Physics,
Vol.3 No.11,
November
28,
2012
ABSTRACT: Layers of transparent and conductive Sn-doped zinc oxide (ZnO) have been prepared using chemical reactive liquid phase (spray) method on glass substrates. X-ray diffraction analysis shows that the obtained layers show preferential grains orientation along the direction (002). Microstructural analysis indicates that the thickness of the deposited films is independent of Sn content, i.e. 408 nm, and that the average grain size increases with increasing Sn content, ranging from 31 nm to 42 nm. The value of the optical gap obtained using UV-visible transmission spectroscopy method increases slightly from 3.1 eV to 3.3 eV. Moreover, transmission curves reveal that the prepared thin films are transparent in the visible domain.