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X. D. Wu, A. Inam, M. S. Hegde, B. Wilkens, C. C. Chang, S. Miura, S. Matsubara, Y. Miyasaga and N. Shohata, “High critical currents in epitaxial YBa2Cu3O7?x thin films on silicon with buffer layers,” Ap-plied Physics Letters, Vol. 54,No. 8, 1989, pp. 754-756.

has been cited by the following article:

• TITLE: Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

  AUTHORS: V. R. Chinchamalatpure, S. A. Ghosh, G. N. Chaudhari

  KEYWORDS: Sol-Gel Technique, BaTiO3 Thin Film, C-V, I-V

  JOURNAL NAME: Materials Sciences and Applications, Vol.1 No.4, October 29, 2010

  ABSTRACT: BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.