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J. S. Lee, Y. H. Bae and Y. H. Lee, “A novel BaTiO3/SiO2-based vol-tage-programmable link applicable to on-chip programmable devices,” Semiconductor Science and Technolology, Vol. 15, No. 3, 2000, pp. 267-269

has been cited by the following article:

• TITLE: Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

  AUTHORS: V. R. Chinchamalatpure, S. A. Ghosh, G. N. Chaudhari

  KEYWORDS: Sol-Gel Technique, BaTiO3 Thin Film, C-V, I-V

  JOURNAL NAME: Materials Sciences and Applications, Vol.1 No.4, October 29, 2010

  ABSTRACT: BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.