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Watanabe, T., Funakubo, H., Osada, M., Noguchiand, Y. and Miyayama, M. (2002) Preparation and characteriza-tion of a- and b-axis-oriented epitaxially grown Bi4Ti 3O12-based thin films with long-range lattice matching, Applied Physic Letters, 81, 1660-1662.

has been cited by the following article:

• TITLE: Structural and electrical characterization of Bi2VO5.5 / Bi4Ti3O12 bilayer thin films deposited by pulsed laser ablation technique

  AUTHORS: Neelam Kumari, Saluru Baba Krupanidhi, Kalidhindi Balakrishna Raju Varma

  KEYWORDS: Thin Films; Ferroelectric; Dielectric; Laser ablation

  JOURNAL NAME: Natural Science, Vol.2 No.10, October 29, 2010

  ABSTRACT: The pulsed laser ablation technique has been employed to fabricate bilayer thin films con-sisting of layered structure ferroelectric bismuth vanadate (Bi2VO5.5) and bismuth titanate (Bi4Ti3O12) on platinized silicon substrate. The phase formation of these films was confirmed by X-ray diffraction (XRD) studies and the crystallites in these bilayers were randomly oriented as indicated by diffraction pattern consisting of the peaks corresponding to both the materials. The homogeneous distribution of grains (~300 nm) in these films was confirmed by atomic force microscopy. The cross-sectional scanning electron microscopy indicated the thickness of these films to be around 350 nm. The film exhi-bited P-E hysteresis loops with Pr ~ 11 ?C/cm2 and Ec ~ 115 kV/cm at room temperature. The dielectric constant of the bilayer was ~ 225 at 100 kHz which was higher than that of homogeneous Bi2VO5.5 film.