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T. Y. Tan and U. Gosele, “Point Defects, Diffusion Processes, and Swirl Defect Formation in Silicon,” Physics and Astronomy, Vol. 37, No. 1, 1985, pp. 1-17.

has been cited by the following article:

• TITLE: Java Simulation of Au Diffusion in Si Affected by Vacancies and Self-Interstitials: Partial Differential Equations

  AUTHORS: Masami Morooka

  KEYWORDS: Numerical Solution; Partial Differential Equations; Simulation of Impurity Diffusion; Java; Simulation of Partial Differential Equations

  JOURNAL NAME: Journal of Software Engineering and Applications, Vol.5 No.10, October 31, 2012

  ABSTRACT: A Java program in a GUI environment has been developed for the numerical solution of basic partial differential equations and applied to Au diffusion in Si affected by vacancies and self-interstitials. Text fields of selected parameters for the calculation are set on the display, and the calculation starts by checking the start button after putting values on the text fields. The calculated results are plotted immediately after the finish of the calculation as the concentration profiles of substitutional Au, interstitial Au, vacancies and self-interstitials, and their diffusion can be presented immediately, resulting in the identification of the diffusion mechanism. By changing the values of the text fields, new results can be represented immediately. The diffusion of Au in Si can be simulated correctly and easily by this program. Results from the program for one set of conditions are shown, including images produced on the display.