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J. Hopwood, “Ionized Physical Vapor Deposition of Integrated Circuit Interconnects,” Physics of Plasmas, Vol. 5, No. 5, 1998, pp. 1624-1631. doi:10.1063/1.872829

has been cited by the following article:

• TITLE: Probe and Emission Spectrometry Diagnostics in Hollow Cathode Magnetron

  AUTHORS: N. P. Poluektov, Yu P. Tsar’gorodsev, I. I. Usatov, A. G. Evstigneev, I. A. Kamyschov

  KEYWORDS: Hollow Cathode Magnetron; Ionized Physical Vapor Deposition

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.10, October 31, 2012

  ABSTRACT: This paper deals with the characterization of an ionized physical vapor deposition (IPVD) by means of hollow cathode magnetron. Langmuir probe, optical emission spectroscopy measurements were used to study a mechanism for the production of excited argon and copper atoms and ions. The kinetic processes of excitation were considered and the main processes were determined using results of measurements. The pressure range is 0.5 - 10 mTorr with 1- 5 kW discharge power. Plasma parameters such as electron densities and temperatures, electron energy distribution function, plasma space and floating potentials as a function of the position, pressure and power in the growth chamber were measured. The plasma density is up to 1012 cm?3 at 20 cm from the magnetron for 10 mTorr.