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S. Yoshida, et al., “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy,” Physical Review Letters, Vol. 98, No. 2, 2007, Article ID: 26802. doi:10.1103/PhysRevLett.98.026802

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• TITLE: Calibration of GaAlAs Semiconductor Diode

  AUTHORS: S. B. Ota, Smita Ota

  KEYWORDS: Semiconductor; Temperature Sensors; GaAlAs

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.10, October 31, 2012

  ABSTRACT: The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K - 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root indicates that the fitted polynomials are of similar character. The high temperature root is found to increase for the least squares fitted polynomials corresponding to higher current values.