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V. P. Markevich, I. D. Hawkins, A. R. Peaker, K. V. Emtsev, V. V. Litenov, L. I. Murin and L. Dobaczewski, “Vacancy-Group-V-Impurity Atom Pairs in Ge Crystals Doped with P, As, Sb, and Bi,” Physical Review B, Vol. 70, No. 23, 2004, Article ID: 235213.

has been cited by the following article:

• TITLE: New Method for Diagnostics of Ion Implantation Induced Charge Carrier Traps in Micro- and Nanoelectronic Devices

  AUTHORS: Mukhtar Ahmed Rana

  KEYWORDS: Semiconductors; Ion Implantation; Defects, Dust Acoustic Waves; Deep Level Transient Spectroscopy; Electron-Hole Plasma; Nanoelectronics

  JOURNAL NAME: World Journal of Nuclear Science and Technology, Vol.2 No.4, October 31, 2012

  ABSTRACT: An important problem of defect charging in electron-hole plasma in a semiconductor electronic device is investigated using the analogy of dust charging in dusty plasmas. This investigation yielded physical picture of the problem along with the mathematical model. Charging and discharging mechanism of charge carrier traps in a semiconductor elec-tronic device is also given. Potential applications of the study in semiconductor device technology are discussed. It would be interesting to find out how dust acoustic waves in electron-hole plasma in micro and nanoelectronic devices can be useful in finding out charge carrier trap properties of impurities or defects which serve as dust particles in elec-tron-hole (e-h) plasma. A new method based on an established technique “deep level transient spectroscopy” (DLTS) is described here suggesting the determination of properties of charge carrier traps in present and future semiconductor devices by measuring the frequency of dust acoustic waves (DAW). Relationship between frequency of DAW and properties of traps is described mathematically proposing the basis of a technique, called here, dust mode frequency deep level transient spectroscopy (DMF-DLTS).