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H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai, J. J. Wang, D. P. Yu, Y. Ding, Q. L. Hang and S. Q. Feng, “Ga2O3 Nanowires Prepared by Physical Evaporation,” Solid State Communications, Vol. 109, No. 11, 1999, pp. 677-682. doi:10.1016/S0038-1098(99)00015-0

has been cited by the following article:

• TITLE: Growth of Gallium Oxide Nanowires by Pulsed Laser Deposition

  AUTHORS: Hiroyasu Yamahara, Munetoshi Seki, Hitoshi Tabata

  KEYWORDS: Gallium Oxide; Nanowires; Pulsed Laser Deposition; Cathode Luminescence

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.2 No.4, October 17, 2012

  ABSTRACT: We report on the synthesis of gallium oxide nanowires by pulsed laser deposition using a gold catalyst. In the vapor-liquid-solid process, gold thickness was the crucial parameter for deciding the morphology of nanowires. In the case of 1 nm thick gold, homogeneous nanowire growth was confirmed at temperatures of 700°C to 850°C. Transmission electron microscopy and selected area electron diffraction measurements showed that the nanowires were polycrystalline. In the cathode luminescence spectra, UV, blue, green and red emission peaks were observed, as reported in previous studies. As growth temperature was increased, the relative intensities of blue, green, and red emissions decreased. Thermal annealing treatments were effective in decreasing the blue, green and red emission peaks, suggesting that these emission peaks were associated with oxygen vacancies.