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M. M. Hayat, W. L. Sargeant and B. E. A. Saleh, “Effect of Dead Space on Gain and Noise in Si and GaAs Avalanche Photodiodes,” IEEE Journal of Quantum Electronics, Vol. 28, No. 5, 1992. pp. 1360-1365. doi:10.1109/3.135278

has been cited by the following article:

• TITLE: A Novel Responsivity Model for Stripe-Shaped Ultraviolet Photodiode

  AUTHORS: Yongjia Zhao, Xiaoya Zhou, Xiangliang Jin, Kehan Zhu

  KEYWORDS: Responsivity; Model; Lateral PN Junction; Stripe-Shaped; Silicon; Ultraviolet (UV) Photodiode; CMOS

  JOURNAL NAME: Circuits and Systems, Vol.3 No.4, October 30, 2012

  ABSTRACT: A novel responsivity model, which is based on the solution of transport and continuity equation of carriers generated both in vertical and lateral PN junctions, is proposed for optical properties of stripe-shaped silicon ultraviolet (UV) photodiodes. With this model, the responsivity of the UV photodiode can be estimated. Fabricated in a standard 0.5 μm CMOS process, the measured spectral responsivity of the stripe-shaped UV photodiode shows a good match with the numerical simulation result of the responsivity model at the spectral of UV range. It means that the responsivity model, which is used for stripe-shaped UV photodiode, is reliable.