TITLE:
Designing Parameters for RF CMOS Cells
AUTHORS:
Viranjay M. Srivastava, K. S. Yadav, G. Singh
KEYWORDS:
CMOS, Cell Library, Contact Resistance, DG MOSFET, DP4T Switch, Potential Barrier, Radio Frequency, RF Switch, Resistance of MOS, Voltage-Current Curve, VLSI
JOURNAL NAME:
Circuits and Systems,
Vol.1 No.2,
October
26,
2010
ABSTRACT: In this paper, we have investigated the design parameters of RF CMOS cells which will be used for switch in the wireless telecommunication systems. This RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. The results for the development of a cell-library which includes the basics of the circuit elements required for the radio frequency sub-systems of the integrated circuits such as V-I characteristics at low-voltages, contact resistance which is present in the switches and the potential barrier with contacts available in devices has been discussed.