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O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin and M. R. Krames, “High Performance Thin-Film Flip-Chip InGaNGaN Light-Emitting Diodes,” Applied Physics Letters, Vol. 89, No. 7, 2006, pp. 071109-071111. doi:10.1063/1.2337007

has been cited by the following article:

• TITLE: Enhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation

  AUTHORS: Chung-Mo Yang, Dong-Seok Kim, Yun Soo Park, Jae-Hoon Lee, Yong Soo Lee, Jung-Hee Lee

  KEYWORDS: GaN; Light-Emitting Diode (LED); Al2O3; PEALD; Passivation; Double Dielectric Stack Layer

  JOURNAL NAME: Optics and Photonics Journal, Vol.2 No.3, September 20, 2012

  ABSTRACT: SiO2Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based light-emitting diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the light emitted from the LED surface. In addition, the effect of the Fresnel reflection is also responsible for the enhancement in output power of the double dielectric passivated LED. The leakage current of the LED passivated with Al2O3 layer was -3.46 × 10-11 A at -5 V, at least two and three orders lower in magnitude compared to that passivated with SiO2 layer (-7.14 × 10-9 A) and that of non-passivated LED (-1.9 × 10-8 A), respectively, which indicates that the Al2O3 layer is very effective in passivating the exposed GaN surface after dry etch and hence reduces nonradiative recombination as well as reabsorption of the emitted light near the etched surface.