Article citationsMore>>

K. S. Krisch, J. D. Bude and L. Manchanda, “Gate Capacitance Attenuation in MOS devices with Thin Dielectrics,” IEEE Electron Device Letters, Vol. 17, No. 14, 1996, pp. 521-524. doi:10.1109/55.541768

has been cited by the following article:

• TITLE: Nanocapacitor with a Cantor Multi-Layered Structure

  AUTHORS: Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

  KEYWORDS: Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.9, September 24, 2012

  ABSTRACT: We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.