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R. Castagne and A. Vapaille, “Description of the SiO2-Si Interface Properties by Means of very Low Frequency MOS Capacitance Measurements,” Surface Science, Vol. 28, No. 1, 1971, pp. 157-193, doi:10.1016/0039-6028(71)90092-6

has been cited by the following article:

• TITLE: Nanocapacitor with a Cantor Multi-Layered Structure

  AUTHORS: Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

  KEYWORDS: Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.9, September 24, 2012

  ABSTRACT: We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.