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A. Ghetti, “Characterization and Modeling of the Tunneling Current in Si-SiO2-Si Structures with Ultra-Thin Oxide Layer,” Microelectronic Engineering, Vol. 59, No. 1-4, 2001, pp. 127-136. doi:10.1016/S0167-9317(01)00656-6

has been cited by the following article:

• TITLE: Nanocapacitor with a Cantor Multi-Layered Structure

  AUTHORS: Rubén Montelongo, David González, Ricardo Bustos, Gabriel González

  KEYWORDS: Nanocapacitor; Cantor Structure; Schrodinger-Poisson Equation

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.9, September 24, 2012

  ABSTRACT: We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.