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Yan, Q., Huang, B., Yu, J., Zheng, F., Zang, J., Wu, J., Gu, B.-L., Liu, F. and Duan, W. (2007) Intrinsic current- voltage characteristics of graphene nanoribbon transistors and effect of edge doping. Nano Letters, 7(6), 1469- 1473.

has been cited by the following article:

• TITLE: Impact of phonon-assisted tunneling on electronic conductivity in graphene nanoribbons and oxides ones

  AUTHORS: Povilas Pipinys, Antanas Kiveris

  KEYWORDS: Electronic Transport in Graphene; Phonon-Assisted Tunneling; Electron-Phonon

  JOURNAL NAME: Natural Science, Vol.2 No.9, October 8, 2010

  ABSTRACT: Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent conductivity and I-V characteristics measured by various investigators for graphene nanoribbons and oxides ones. Proposed model describes well not only current dependence on temperature but also the temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V/T data with the phonon-assisted tunneling theory.