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G. Q. Lin, H. Gong and P. Wu, “Electronic Properties of Barium Chalcogenides from First-Principles Calculations: Tailoring Wide-Band-Gap II-VI Semiconductors,” Physical Review B, Vol. 71, No. 8, 2005, Article ID: 085203.

has been cited by the following article:

• TITLE: Ab Initio Study of Structural and Electronic Properties of Barium Chalcogenide Alloys

  AUTHORS: Mohammed Ameri, Amina Touia, Houari Khachai, Zoubir Mahdjoub, Mohamed Zoheir Chekroun, Amel Slamani

  KEYWORDS: Semiconductor; FP-LMTO; Effective Mass

  JOURNAL NAME: Materials Sciences and Applications, Vol.3 No.9, September 27, 2012

  ABSTRACT: First-principles calculations have been used to study the structural and electronic properties of BaS1–xSex ternary alloy using full-potential muffin-tin orbital’s (FP-LMTO) method within density functional theory (DFT). In this approach, the local-density approximation (LDA) and generalized gradient approximation (GGA) are used for the exchange-correlation (XC) potential. The effect of composition on lattice parameter, bulk modulus, band gap and effective mass was investigated. The deviations of the lattice constant from Vegard’s law and the bulk modulus from linear concentration depend- ence were observed for BaS1–xSex alloy. The microscopic origins of bowing parameter were explained using approach of Zunger and co-workers. Accordance is found from the comparison of our results with other experimental and theo- retical calculations.