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T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva1 and S. N. Yurkov1, “Carrier Mobility Model for Simulation of SiC-Based Electronic Devices,” Semiconductor Science and Technology, Vol. 17, No. 9, 2002, pp. 974-977.

has been cited by the following article:

• TITLE: Modelling of Thermal Behavior N-Doped Silicon Resistor

  AUTHORS: Fouad Kerrour, Ali Boukabache, Patrick Pons

  KEYWORDS: Silicon; TCRs, Mobility; Doping; Temperature

  JOURNAL NAME: Journal of Sensor Technology, Vol.2 No.3, September 26, 2012

  ABSTRACT: From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.