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D. B. M. Klaassen, “Unified Model for Device Simulation-I-II. Temperature Dependence of Carrier mobility and Life Time A,” Solid State Electronic, Vol. 35, No. 7, 1992, pp.953-967.

has been cited by the following article:

• TITLE: Modelling of Thermal Behavior N-Doped Silicon Resistor

  AUTHORS: Fouad Kerrour, Ali Boukabache, Patrick Pons

  KEYWORDS: Silicon; TCRs, Mobility; Doping; Temperature

  JOURNAL NAME: Journal of Sensor Technology, Vol.2 No.3, September 26, 2012

  ABSTRACT: From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.