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N. D. Arora and D. J. Roulston, “Electron and Hole Motilities in Silicon as a Function of Concentration and Temperature” IEEE Transactions on Electron Devices, Vol. 29, No. 2, 1982, pp. 292-295. doi:10.1109/T-ED.1982.20698

has been cited by the following article:

• TITLE: Modelling of Thermal Behavior N-Doped Silicon Resistor

  AUTHORS: Fouad Kerrour, Ali Boukabache, Patrick Pons

  KEYWORDS: Silicon; TCRs, Mobility; Doping; Temperature

  JOURNAL NAME: Journal of Sensor Technology, Vol.2 No.3, September 26, 2012

  ABSTRACT: From the analysis of the frequently models of mobility used in the literature, we determine by an identification method the temperature coefficients α and β of a silicon resistance doped with donor atoms. Their variations show a non linear dependence according to the doping and the existence of a minimal value at particular concentration. Moreover, the comparison between the obtained results and those of a P-type resistance shows that there is a strong similarity in their thermal behaviours, except for a particular couple of α and β.