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H. F. Sun and C. R. Bolognesi, “Anomalous Behavior of Algan/Gan Heterostructure Field-Effect Transistors at Cryogenic Temperatures: From Current Collapse to Current Enhancement with Cooling,” Applied Physics Letters, Vol. 90, No. 12, 2007, Article ID: 123505. doi:10.1063/1.2715032

has been cited by the following article:

• TITLE: 2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s

  AUTHORS: Manel Charfeddine, Hafedh Belmabrouk, Mohamed Ali Zaidi, Hassen Maaref

  KEYWORDS: AlGaN/GaN; High Electron Mobility Transistors; Two-Dimensional Electron Gas Sheet Charge Density; Current–Voltage Characteristics; Kink Effect

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.8, August 15, 2012

  ABSTRACT: A threshold-voltage-based 2-D theoretical model for the Current–Voltage characteristics of the AlGaN/GaN high electron mobility transistors (HEMT’s) is developed. The present work proposes an improved charge-control model by employing the Robin boundary condition when introduced the solution of the 2-D Poisson’s equation in the density of charge depleted in the AlGaN layer. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model in order to take into account the impact of gate lengths. The relation between the kink effect and existing deep centers has also been confirmed by using an electrical approach, which can allow to adjust some of electron transport parameters in order to optimize the output current.