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B. D. Yang and L. S. Kim, “A Low Power Charge-Recycling ROM Architecture,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 11, No. 4, 2003, pp. 590-600.

has been cited by the following article:

• TITLE: Fast CR-SRAM Using New Charge-Recycling Scheme

  AUTHORS: Leilei Li, Xin Chen, Xu Wang

  KEYWORDS: SRAM; Lower-Power; Charge-Recycling

  JOURNAL NAME: Engineering, Vol.4 No.8, August 31, 2012

  ABSTRACT: In this paper, a CR-SRAM using new charge recycling scheme is described, novel bit-line pre-charge voltage distribution is proposed. The SRAM pre-charge voltage level is designed by logarithm instead of linear. The new design leads to improvement in speed compared to the original CR-SRAM. Simulation results show that the new CR-SRAM using novel pre-charge voltage distribution scheme reduced the write access time by 34% with 9% power dissipation penalty.