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M. K. Kwang, H. S. Jung, E. K. Dong, et al., “The Growth of a Low Defect Inas HEMT Structure on Si by Using an Algasb Buffer Layer Containing Insb Quantum Dots for Dislocation Termination,” Nanotechnology, Vol. 20, No. 22, 2009, p. 225201.

has been cited by the following article:

• TITLE: Progress in Antimonide Based III-V Compound Semiconductors and Devices

  AUTHORS: Chao Liu, Yanbo Li, Yiping Zeng

  KEYWORDS: Antimonide Based Compound Semiconductors (ABCS), IR Laser, IR Detector, Integrated Circuit, Functional Device

  JOURNAL NAME: Engineering, Vol.2 No.8, September 9, 2010

  ABSTRACT: In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.